* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available
* Material categorization: for definitions of compliance please see www.vish
VB30M120C Datasheet (100.55 KB)
VB30M120C
100.55 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com VB30M120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMB.
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