• Part: VB30M120C
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 100.55 KB
Download VB30M120C Datasheet PDF
VB30M120C page 2
Page 2
VB30M120C page 3
Page 3

VB30M120C Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
  • Material categorization: for definitions of pliance please see .vishay./doc?99912