• Part: VB30M120C-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 89.00 KB
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Vishay
VB30M120C-E3
VB30M120C-E3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: for definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-263AB Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro...