VB30M120C-E3 Overview
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 .vishay. Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 150 °C TO-263AB Diode variations mon cathode.
VB30M120C-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: for definitions of pliance please see .vishay./doc?99912