VB30M120C Description
.vishay. VB30M120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get.
VB30M120C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: for definitions of pliance please see .vishay./doc?99912