VB30M120C
VB30M120C is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
Available
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 120 V 150 A 0.68 V 150 °C
D2PAK (TO-263AB)
Circuit configuration mon cathode
MECHANICAL DATA
Case: D2PAK (TO-263AB) Molding pound meets UL 94 V-0 flammability rating Base P/N-E3
- Ro HS-pliant, mercial grade Base P/N-M3
- halogen-free, Ro HS-pliant, and mercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR) Operating junction and storage temperature range d V/dt TJ, TSTG
VB30M120C 120 30 15
150 10 000 -40 to +150
UNIT V
V/μs °C
Revision: 20-Jun-2018
Document Number: 89467
For technical questions within your region: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000...
