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VB30M120C Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VB30M120C
Manufacturer Vishay
File Size 100.55 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Download VB30M120C Download (PDF)

Overview

www.vishay.com VB30M120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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