VBT3045BP Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- TJ 200 °C max. in solar bypass application
- Material categorization: For definitions of pliance please see .vishay./doc?99912
