VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay Siliconix

Part number	VBT3045C
Manufacturer	Vishay Siliconix
File Size	97.80 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT3045C Datasheet
Additional preview pages of the VBT3045C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020,  LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Mar 31, 2011 |