VBT3045C Description
VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT3045C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started.
VBT3045C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020,
- Material categorization: for definitions of pliance