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VBT3045CBP-M3 - Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • TJ 200 °C max. in solar bypass mode.

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Datasheet Details

Part number VBT3045CBP-M3
Manufacturer Vishay
File Size 99.24 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT3045CBP-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VBT3045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT3045CBP PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 45 V 200 A VF at IF = 15 A 0.39 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) Package Circuit configuration 200 °C D2PAK (TO-263AB) Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max.