VBT3045CBP-M3 Datasheet | Vishay

.vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) 1 VBT3045CBP PIN 1 PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 45 V 200 A VF at IF = 15 A 0.39 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) Package Circuit configuration 200 °C D2PAK (TO-263AB) mon cathode Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per...