• Part: VBT3045BP-M3
  • Description: Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 79.47 KB
Download VBT3045BP-M3 Datasheet PDF
Vishay
VBT3045BP-M3
VBT3045BP-M3 is Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-263AB PIN 1 PIN 2 2 1 K HEATSINK Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - TJ 200 °C max. in solar bypass application - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTCS Package...