VBT3045BP Description
Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.
VBT3045BP Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- TJ 200 °C max. in solar bypass application
- Material categorization: For definitions of pliance please see .vishay./doc?99912
VBT3045BP Applications
- RoHS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As