VBT3045CBP-E3 Datasheet | Vishay

.vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® TO-263AB 2 1 VBT3045CBP PIN 1 PIN 2 HEATSINK Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - TJ 200 °C max. in solar bypass mode application - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse...