VBT3045CBP-E3 Description
VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® TO-263AB K 2 1 VBT3045CBP PIN 1 K PIN 2 HEATSINK.
VBT3045CBP-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020
- TJ 200 °C max. in solar bypass mode application
- Material categorization: For definitions of pliance