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Vishay Intertechnology Electronic Components Datasheet

VESD12A1A-HD1 Datasheet

ESD Protection Diode

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www.vishay.com
VESD12A1A-HD1
Vishay Semiconductors
ESD Protection Diode in LLP1006-2L
2
20855
1
20856
MARKING (example only)
XY
Bar = cathode marking
X = date code
Y = type code (see table below)
21121
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD protection
• Low leakage current < 0.01 μA
• Low load capacitance CD = 22.5 pF
(VR = 6 V; f = 1 MHz)
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC 61000-4-5 IPP > 8 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• PATENT(S): www.vishay.com/patents
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VESD12A1A-HD1
VESD12A1A-HD1-GS08
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VESD12A1A-HD1 LLP1006-2L
TYPE
CODE
K
WEIGHT
0.72 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VESD12A1A-HD1
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5; tP = 8/20 μs; single shot
Acc. IEC 61000-4-5; tP = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
8
200
± 30
± 30
-40 to +125
-55 to +150
UNIT
A
W
kV
kV
°C
°C
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and international patents.
Rev. 1.9, 16-May-17
1 Document Number: 81879
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VESD12A1A-HD1 Datasheet

ESD Protection Diode

No Preview Available !

www.vishay.com
VESD12A1A-HD1
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD12A1A-HD1
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of line which can be protected
Reverse stand-off voltage
Max. reverse working voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
At IR = 0.1 μA
At VR = 12 V
At IR = 1 mA
At IPP = 1 A
At IPP = IPPM = 8 A
At IPP = 0.2 A
At IPP = 1 A
At IPP = IPPM = 8 A
At VR = 0 V; f = 1 MHz
At VR = 6 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VC
VF
VF
VF
CD
CD
MIN.
-
-
12
-
13.5
-
-
-
-
-
-
-
TYP.
-
-
-
< 0.01
14
14.8
21
0.85
1.0
2.0
54
22.5
MAX.
1
12
-
0.1
16
17
24
1.2
1.3
2.5
65
-
UNIT
lines
V
V
μA
V
V
V
V
V
V
pF
pF
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD12A1A-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD12A1A-HD1 clamping behaviour is bidirectional
and asymmetrical (BiAs).
L1
Ground
BiAs
20925
Rev. 1.9, 16-May-17
2 Document Number: 81879
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VESD12A1A-HD1
Description ESD Protection Diode
Maker Vishay
Total Page 6 Pages
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