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Vishay Intertechnology Electronic Components Datasheet

VF20100C-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF20100C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C maximum 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
2
1
VB20100C
PIN 1
K
PIN 2
HEATSINK
VI20100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
100 V
150 A
0.58 V
150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100C VF20100C VB20100C VI20100C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
100
20
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
EAS
IRRM
dV/dt
VAC
TJ, TSTG
150
1.0
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 13-Dec-16
1 Document Number: 88977
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VF20100C-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
per diode
Reverse current per diode
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
105 (minimum)
0.55
0.65
0.50
0.58
17
5.3
-
12
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
0.79
-
0.68
-
-
800
25
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100C
VF20100C
Typical thermal resistance per diode
RJC
2.8
5.5
VB20100C
2.8
VI20100C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100C-E3/4W
1.881
ITO-220AB
VF20100C-E3/4W
1.75
TO-263AB
VB20100C-E3/4W
1.39
TO-263AB
VB20100C-E3/8W
1.39
TO-262AA
VI20100C-E3/4W
1.452
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
VF20100C
16 VI(B)20100C
12
V20100C
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
4 8 12 16 20
Average Forward Current (A)
24
Fig. 2 - Forward Power Loss Characteristics
Per Diode
Revision: 13-Dec-16
2 Document Number: 88977
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VF20100C-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 6 Pages
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