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VFT1045BP - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2011/65/EU 2 1.
  • Halogen-free according to IEC 61249-2-21 definition VFT1045BP PIN 1 PIN 2.

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Datasheet Details

Part number VFT1045BP
Manufacturer Vishay
File Size 141.01 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT1045BP Datasheet
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Full PDF Text Transcription

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VFT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A TMBS ® ITO-220AC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2011/65/EU 2 1 • Halogen-free according to IEC 61249-2-21 definition VFT1045BP PIN 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.
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