VFT1045CBP rectifier equivalent, trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per .
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRI.
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