VFT1080C Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A .

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Datasheet Specifications

Part number: VFT1080C
Manufacturer: Vishay ↗
File Size: 135.70 KB
Datasheet: VFT1080C_Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5 A TJ max. 2x5A 80 V 80 A 0.57 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 fla

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VFT1080C Dual Trench MOS Barrier Schottky Rectifier Vishay

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