• Part: VFT1045BP
  • Description: Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 141.01 KB
Download VFT1045BP Datasheet PDF
Vishay
VFT1045BP
FEATURES - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 - pliant to Ro HS Directive 2011/65/EU 2 1 - Halogen-free according to IEC 61249-2-21 definition PIN 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.52 V 150 °C 200 °C Case: ITO-220AC Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per .Data Sheet.co.kr MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive...