VFT1045CBP - Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VFT1045CBP
Manufacturer	Vishay
File Size	139.98 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	VFT1045CBP Datasheet
Additional preview pages of the VFT1045CBP datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition 1 VFT1045CBP PIN 1 PIN 3 PIN 2 2 3.

📁 Similar Datasheet

VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT15-12 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT15-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT150-28 - VHF POWER MOSFET Channel Enhancement Mode (Advanced Semiconductor)
VFT150-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT30-28 - VHF POWER MOSFET (Advanced Semiconductor)
VFT30-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

Other Datasheets by Vishay

Published: Mar 28, 2012 |