VFT1045CBP
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1 VFT1045CBP
PIN 1 PIN 3 PIN 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TOP max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
.Data Sheet.co.kr
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum...
