* TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Compliant to RoHS Directive 2002/95/EC and in ac
VIT1045C Datasheet (189.51 KB)
VIT1045C
189.51 KB
Dual low-voltage trench mos barrier schottky rectifier.
New Product VT1045C, VIT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 .
📁 Related Datasheet
VIT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
VIT10200C-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VIT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1080S Trench MOS Barrier Schottky Rectifier (Vishay)
VIT1080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
