* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT1080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1080C PIN 1 PIN 3 2 3 1
VIT1080C Datasheet (188.39 KB)
VIT1080C
188.39 KB
Dual trench mos barrier schottky rectifier.
New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® TO-22.
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