* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Not recommended for PCB bottom side wave mounting
* Solder
VIT3060G-E3 Datasheet (143.17 KB)
VIT3060G-E3
143.17 KB
Dual high voltage trench mos barrier schottky rectifier.
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.
📁 Related Datasheet
VIT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060C Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3060C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VIT3080S Trench MOS Barrier Schottky Rectifier (Vishay)
