* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPL
VIT4060C-E3 Datasheet (138.33 KB)
VIT4060C-E3
138.33 KB
Dual trench mos barrier schottky rectifier.
www.vishay.com VT4060C-E3, VIT4060C-E3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A .
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