VS-10UT10 Datasheet | Vishay

.vishay. VS-10UT10, VS-10WT10FN Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A I-PAK (TO-251AA) Base cathode D-PAK (TO-252AA) Base cathode 13 Anode 2 Anode Cathode 1 Cathode 3 Anode Anode VS-10WT10FN PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS I-PAK (TO-251AA), D-PAK (TO-252AA) 10 A 100 V 0.66 V 4 mA at 125 °C 175 °C Single die 54 mJ Features - 175 °C high performance Schottky diode - Very low forward voltage drop - Extremely low reverse leakage - Optimized VF vs. IR trade off for high efficiency - Increased ruggedness for reverse avalanche capability - RBSOA available - Negligible...