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VS-100BGQ100 - Schottky Rectifier

General Description

The VS-100BGQ100 Schottky rectifier has been optimized for low reverse leakage at high temperature.

 The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Key Features

  • 175 °C max. operating junction temperature.
  • High frequency operation.
  • Low forward voltage drop.
  • Continuous high current operation.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Screw mounting only.
  • Designed and qualified according to JEDEC®-JESD 47.
  • PowerTab® package.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-100BGQ100 Vishay Semiconductors High Performance Schottky Rectifier, 100 A Cathode Anode PowerTab® PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM EAS TJ max. Package 100 A 100 V 0.82 V 180 mA at 125 °C 9 mJ 175 °C PowerTab® Circuit configuration Single FEATURES • 175 °C max. operating junction temperature • High frequency operation • Low forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC®-JESD 47 • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-100BGQ100 Schottky rectifier has been optimized for low reverse leakage at high temperature.