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Vishay Intertechnology Electronic Components Datasheet

VS-175BGQ045 Datasheet

Schottky Rectifier

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www.vishay.com
VS-175BGQ045
Vishay Semiconductors
Schottky Rectifier, 175 A
Cathode
Anode
PowerTab®
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
PowerTab®
175 A
45 V
0.7 V
640 mA at 125 °C
150 °C
Single die
40 mJ
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab® package
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-175BGQ045 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
TC
VRRM
IFSM tp = 5 μs sine
175 Apk (typical)
VF
TJ
TJ Range
VALUES
175
103
45
8700
0.63
150
- 55 to 150
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
175BGQ045
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 103 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 6 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
175
8700
1550
40
6
UNITS
A
A
mJ
A
Revision: 17-Jun-11
1 Document Number: 94582
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-175BGQ045 Datasheet

Schottky Rectifier

No Preview Available !

www.vishay.com
VS-175BGQ045
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
100 A
175 A
TJ = 25 °C
100 A
175 A
TJ = 150 °C
TJ = 150 °C, VR = 45 V
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated VR
TYP. MAX.
0.55 0.58
0.67 0.75
0.49 0.54
0.63 0.7
1200 2000
0.6 2
360 640
5600
3.5
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style PowerTab®
VALUES
- 55 to 150
UNITS
°C
0.25
°C/W
0.20
5g
0.18 oz.
1.2 (10)
2.4 (20)
N·m
(lbf · in)
175BGQ045
Revision: 17-Jun-11
2 Document Number: 94582
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-175BGQ045
Description Schottky Rectifier
Maker Vishay
Total Page 7 Pages
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