VS-19TQ015S-M3 - High Performance Schottky Rectifier

Description

The VS-19TQ015S-M3 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies.

The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature.

Features

125 °C TJ operation (VR < 5 V).
Optimized for OR-ing.

Vishay

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Datasheet Details

Part number	VS-19TQ015S-M3
Manufacturer	Vishay
File Size	156.74 KB
Description	High Performance Schottky Rectifier
Datasheet	VS-19TQ015S-M3 Datasheet
Additional preview pages of the VS-19TQ015S-M3 datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-19TQ015S-M3 Vishay Semiconductors High Performance Schottky Rectifier, 19 A Base cathode 2 TO-263AB (D2PAK) 1 N/C 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-263AB (D2PAK) 19 A 15 V 0.36 V 522 mA at 100 °C 125 °C Single die 6.

Published: Mar 25, 2016 |