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VS-19TQ015SPbF - High Performance Schottky Rectifier

Description

The VS-19TQ015SPbF Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies.

The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature.

Features

  • 125 °C TJ operation (VR < 5 V).
  • Optimized for OR-ing.

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Datasheet preview – VS-19TQ015SPbF

Datasheet Details

Part number VS-19TQ015SPbF
Manufacturer Vishay
File Size 148.06 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-19TQ015SPbF Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-19TQ015SPbF Vishay Semiconductors High Performance Schottky Rectifier, 19 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D2PAK 19 A 15 V 0.36 V 522 mA at 100 °C 125 °C Single die 6.75 mJ FEATURES • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.
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