VS-20MT120UFAPbF Description
VS-20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A MTP PRODUCT SUMMARY VCES IC at TC = 96 °C VCE(on) (typical) at IC = 20 A, 25 °C Package Circuit 1200 V 20 A 3.29 V MTP Full bridge.
VS-20MT120UFAPbF Key Features
- Ultrafast Non Punch Through (NPT) technology
- Positive VCE(on) temperature coefficient
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft
- Low diode VF
- Square RBSOA
- Al2O3 DBC substrate
- Very low stray inductance design for high speed operation
- UL approved file E78996
- Speed 8 kHz to 60 kHz
VS-20MT120UFAPbF Applications
- Rugged with ultrafast performance