VS-20MT120UFP Description
VS-20MT120UFP Vishay Semiconductors “Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 40 A MTP PRIMARY CHARACTERISTICS VCES IC at TC = 25 °C VCE(on) Speed 1200 V 40 A 3.29 V 8 kHz to 30 kHz Package MTP Circuit configuration Full bridge.
VS-20MT120UFP Key Features
- Ultrafast non punch through (NPT) technology
- Positive VCE(on) temperature coefficient
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft
- Low diode VF
- Square RBSOA
- Aluminum nitride DBC
- Very low stray inductance design for high speed operation
- UL approved file E78996
- Designed and qualified for industrial level
VS-20MT120UFP Applications
- Rugged with ultrafast performance