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VS-6CUT10-E - High Performance Schottky

Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses.
  • Submicron trench technology.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number VS-6CUT10-E
Manufacturer Vishay
File Size 149.52 KB
Description High Performance Schottky
Datasheet download datasheet VS-6CUT10-E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode Common cathode VS-6CUT10-E PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS 2 Common 1 cathode 3 Anode Anode VS-6CWT10FN-E D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 100 V 0.63 V 1 mA at 125 °C 175 °C Common cathode 12 mJ FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.
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