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Vishay Intertechnology Electronic Components Datasheet

VS-6CWT10FN-E Datasheet

High Performance Schottky

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VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
13
Anode
2 Anode
Common
cathode
VS-6CUT10-E
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
2
Common
1 cathode 3
Anode
Anode
VS-6CWT10FN-E
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2x3A
100 V
0.63 V
1 mA at 125 °C
175 °C
Common cathode
12 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
3 Apk, TJ = 125 °C (typical, per leg)
TJ Range
VALUES
100
0.6
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
VR TJ = 25 °C
VS-6CUT10-E
VS-6CWT10FN-E
100
UNITS
V
Document Number: 94662 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

VS-6CWT10FN-E Datasheet

High Performance Schottky

No Preview Available !

VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance Schottky
Generation 5.0, 2 x 3 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 166 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 4 A, L = 1.5 mH
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse.
See fig. 8
VALUES
3
6
440
70
12
IAS at
TJ max.
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
VFM (1)
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.720
0.825
0.60
0.69
0.3
0.3
114
8.0
-
MAX.
0.79
0.91
0.63
0.74
30
1
-
-
10 000
UNITS
V
μA
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
TJ, TStg
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
4.7
2.35 °C/W
0.3
0.3 g
0.01 oz.
6CUT10
6CWT10FN
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94662
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 05-Jan-11


Part Number VS-6CWT10FN-E
Description High Performance Schottky
Maker Vishay
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