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VS-6CWT10FN-E - High Performance Schottky

Download the VS-6CWT10FN-E datasheet PDF. This datasheet also covers the VS-6CUT10-E variant, as both devices belong to the same high performance schottky family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses.
  • Submicron trench technology.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-6CUT10-E-Vishay.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode Common cathode VS-6CUT10-E PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS 2 Common 1 cathode 3 Anode Anode VS-6CWT10FN-E D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 100 V 0.63 V 1 mA at 125 °C 175 °C Common cathode 12 mJ FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.