VS-6CWT04FN Description
Diode variation EAS D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 45 V 0.54 V 3 mA at 125 °C 175 °C mon cathode 14.
VS-6CWT04FN Key Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche
- RBSOA available
- Negligible switching losses
- Submicron trench technology
- pliant to RoHS Directive 2002/95/EC
VS-6CWT04FN Applications
- Specific for PV cells pybass diode