VS-6CWT10FN-E Description
VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base mon cathode 4 D-PAK (TO-252AA) Base mon cathode 4 13 Anode 2 Anode mon cathode VS-6CUT10-E PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM.
VS-6CWT10FN-E Key Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche capability
- RBSOA available
- Negligible switching losses
- Submicron trench technology
- pliant to RoHS Directive 2002/95/EC
VS-6CWT10FN-E Applications
- Specific for PV cells bypass diode