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VS-6CWT10FN-E Datasheet High Performance Schottky

Manufacturer: Vishay

Download the VS-6CWT10FN-E datasheet PDF. This datasheet also includes the VS-6CUT10-E variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (VS-6CUT10-E-Vishay.pdf) that lists specifications for multiple related part numbers.

Overview

VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode Common cathode VS-6CUT10-E PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max.

TJ max.

Diode variation EAS 2 Common 1 cathode 3 Anode Anode VS-6CWT10FN-E D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 100 V 0.

Key Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses.
  • Submicron trench technology.
  • Compliant to RoHS Directive 2002/95/EC.

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