Datasheet4U Logo Datasheet4U.com

VS-CPV363M4FPbF - IGBT

General Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (insulated metal substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS-100M POWER RELAY Fujitsu
VS-100S POWER RELAY Fujitsu
VS-12M POWER RELAY Fujitsu
VS-12S POWER RELAY Fujitsu
VS-14M POWER RELAY Fujitsu

Other Datasheets by Vishay

Part Number Description
VS-CPV363M4KPbF IGBT
VS-CPV363M4UPbF IGBT SIP
VS-CPV362M4FPbF IGBT SIP
VS-CPV364M4FPbF IGBT SIP
VS-CPV364M4KPbF IGBT SIP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com VS-CPV363M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 11 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 8.7 A, 25 °C Speed 1.37 V 1 kHz to 10 kHz Package SIP Circuit configuration Three phase inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed 1 kHz to 10 kHz, see fig. 1 for current vs.