VS-E7MH0112HM3 Datasheet | Vishay

FEATURES - Hyperfast recovery time, reduced Qrr, and soft recovery - 175 °C maximum operating junction temperature - Specified for output and snubber operation - Low forward voltage drop - Low leakage current - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified, meets JESD 201 class 2 whisker test - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use as clamp, snubber and freewheeling diode in a flyback aux power supplies, bootstrap and desaturate for HV MOSFET and IGBT driver, high frequency rectifiers in a cuk and sepic circuit for LED lighting. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMA (DO-214AC) Molding pound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Operating junction and storage temperatures VRRM IF(AV) IFSM TJ, TStg TEST CONDITIONS TSp = 144 °C, D = 0.5 TJ = 25 °C, 8.3 ms sine pulse ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA IF = 1 A Forward voltage, per diode IF = 1 A, TJ = 125 °C IF = 1 A, TJ = 150 °C Reverse leakage current, per diode VR = VR rated TJ = 150 °C, VR = VR rated Junction capacitance VR = 1200 V VALUES 1200 1 21 -55 to...