Datasheet4U Logo Datasheet4U.com

VS-GB50TP120N Datasheet IGBT

Manufacturer: Vishay

📥 Download Datasheet

General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current Pulsed collector current IC ICM (1) TC = 25 °C TC = 80 °C tp = 1 ms Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GB50TP120N Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A.

Key Features

  • High short circuit capability, self limiting to 6 x IC.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 150 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
VS-GB50LA120UX IGBT
VS-GB50NA120UX IGBT
VS-GB50YF120N IGBT
VS-GB55LA120UX IGBT
VS-GB100NH120N Molding Type Module IGBT
VS-GB100TH120N Molding Type Module IGBT
VS-GB100TH120U Molding Type Module IGBT
VS-GB100TP120N Molding Type Module IGBT
VS-GB100TP120U Molding Type Module IGBT
VS-GB100TS60NPbF Ultrafast Speed IGBT