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VS-GB75LA60UF - IGBT

Key Features

  • NPT warp 2 speed IGBT technology with positive temperature coefficient.
  • Higher switching frequency up to 150 kHz.
  • Square RBSOA.
  • Low VCE(on).
  • FRED Pt® hyperfast rectifier.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GB75LA60UF Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Warp 2 Speed IGBT), 70 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 70 A, 25 °C IF DC Package 600 V 70 A at 87 °C 2.31 V 70 A at 86 °C SOT-227 Circuit configuration Low side chopper FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Higher switching frequency up to 150 kHz • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.