VS-GP100TS60SFPbF Description
VS-GP100TS60SFPbF Vishay Semiconductors “Half Bridge” IGBT INT-A-PAK, (Trench PT IGBT), 100 A Proprietary Vishay IGBT Silicon “L Series” INT-A-PAK PRIMARY CHARACTERISTICS VCES IC DC, TC = 130 °C VCE(on) at 100 A, 25 °C Speed 600 V 100 A 1.16 V DC to 1 kHz Package INT-A-PAK Circuit configuration Half bridge.
VS-GP100TS60SFPbF Key Features
- Trench PT IGBT technology
- FRED Pt® anti-parallel diodes with fast recovery
- Very low conduction losses
- Al2O3 DBC
- UL pending
- Designed for industrial level
- Material categorization: for definitions of pliance
- Optimized for high current inverter stages (AC TIG welding
- Direct mounting to heatsink
- Very low junction to case thermal resistance