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VS-GP100TS60SFPbF - IGBT

Key Features

  • Trench PT IGBT technology.
  • FRED Pt® anti-parallel diodes with fast recovery.
  • Very low conduction losses.
  • Al2O3 DBC.
  • UL pending.
  • Designed for industrial level.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com VS-GP100TS60SFPbF Vishay Semiconductors “Half Bridge” IGBT INT-A-PAK, (Trench PT IGBT), 100 A Proprietary Vishay IGBT Silicon “L Series” INT-A-PAK PRIMARY CHARACTERISTICS VCES IC DC, TC = 130 °C VCE(on) at 100 A, 25 °C Speed 600 V 100 A 1.16 V DC to 1 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Trench PT IGBT technology • FRED Pt® anti-parallel diodes with fast recovery • Very low conduction losses • Al2O3 DBC • UL pending • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.