VS-GP300TD60S - Dual INT-A-PAK Low Profile Half Bridge Trench PT IGBT

Vishay

Key Features

Trench PT IGBT technology.
Low VCE(on).
Square RBSOA.

Datasheet Details

Part number	VS-GP300TD60S
Manufacturer	Vishay
File Size	167.50 KB
Description	Dual INT-A-PAK Low Profile Half Bridge Trench PT IGBT
Datasheet	VS-GP300TD60S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GP300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A Proprietary Vishay IGBT Silicon “L Series” Dual INT-A-PAK Low Proﬁle PRIMARY CHARACTERISTICS VCES IC DC at TC = 104 °C VCE(on) (typical) at 300 A, 25 °C Speed 600 V 300 A 1.30 V DC to 1 kHz Package Dual INT-A-PAK low profile Circuit configuration Half bridge FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.