VS-GP400TD60S Description
VS-GP400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 400 A Proprietary Vishay IGBT Silicon “L Series” Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS VCES IC DC at TC = 103 °C VCE(on) (typical) at 400 A, 25 °C Speed 600 V 400 A 1.30 V DC to 1 kHz Package Dual INT-A-PAK low profile Circuit configuration Half bridge.
VS-GP400TD60S Key Features
- Trench PT IGBT technology
- Low VCE(on)
- Square RBSOA
- HEXFRED® antiparallel diode with ultrasoft reverse
- Industry standard package
- Al2O3 DBC
- UL approved file E78996
- Designed for industrial level
- Material categorization: for definitions of pliance
- Increased operating efficiency