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VS-GP400TD60S - Trench PT IGBT

Key Features

  • Trench PT IGBT technology.
  • Low VCE(on).
  • Square RBSOA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GP400TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 400 A Proprietary Vishay IGBT Silicon “L Series” Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS VCES IC DC at TC = 103 °C VCE(on) (typical) at 400 A, 25 °C Speed 600 V 400 A 1.30 V DC to 1 kHz Package Dual INT-A-PAK low profile Circuit configuration Half bridge FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.