VS-GT50TP60N Datasheet - Vishay

Half-Bridge IGBT

VS-GT50TP60N Features

* Low VCE(on) trench IGBT technology

* 5 μs short circuit capability

* VCE(on) with positive temperature coefficient

* Maximum junction temperature 175 °C

* Low inductance case

* Fast and soft reverse recovery antiparallel FWD

* Isolated copper

VS-GT50TP60N General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter vol.

VS-GT50TP60N Datasheet (134.83 KB)