VS-GT55NA120UX - IGBT

Vishay

Key Features

Trench IGBT technology.
Square RBSOA.

VS-GT55NA120UX igbt by Vishay - Datasheet Preview

Datasheet Details

Part number	VS-GT55NA120UX
Manufacturer	Vishay
File Size	215.33 KB
Description	IGBT
Datasheet	VS-GT55NA120UX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com VS-GT55NA120UX Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Trench IGBT), 47 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 50 A, 25 °C Package 1200 V 50 A at 73 °C 2.39 V SOT-227 Circuit configuration High side chopper FEATURES • Trench IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.