VS-MBRB735-M3 Datasheet Text
.vishay.
VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 7.5 A
Base cathode
2
2 1
3 D2PAK (TO-263AB)
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VR
35 V, 45 V
VF at IF
0.57 V
IRM
15 mA at 125 °C
TJ max.
150 °C
EAS Package
7 mJ D2PAK (TO-263AB)
Circuit configuration
Single
Features
- 150 °C TJ operation
- High frequency operation
- Low forward voltage drop
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance...