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Vishay Intertechnology Electronic Components Datasheet

VS-MBRD340PbF Datasheet

Schottky Rectifier

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VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
Base
cathode
4, 2
D-PAK (TO-252AA)
1
Anode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D-PAK (TO-252AA)
3.0 A
20 V, 30 V, 40 V
0.49 V
20 mA at 125 °C
150 °C
Single die
8 mJ
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
3 Apk, TJ = 125 °C
VALUES
3.0
20 to 40
490
0.49
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-MBRD320PbF
20
VS-MBRD330PbF
30
VS-MBRD340PbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 16 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
3.0
490
75
8.0
1.0
UNITS
A
mJ
A
Document Number: 94313 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

VS-MBRD340PbF Datasheet

Schottky Rectifier

No Preview Available !

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.48
0.58
0.41
0.55
0.02
10.7
189
5.0
-
MAX.
0.6
0.7
0.49
0.625
0.2
20
-
-
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TJ (1)
TStg
RthJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 40 to 150
- 40 to 175
UNITS
°C
6.0
°C/W
80
0.3 g
0.01 oz.
MBRD320
MBRD330
MBRD340
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94313
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 14-Jan-11


Part Number VS-MBRD340PbF
Description Schottky Rectifier
Maker Vishay
Total Page 8 Pages
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