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VS-MBRS1100-M3 Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

Overview: .vishay. VS-MBRS190-M3, VS-MBRS1100-M3 Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A SMB (DO-214AA) Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 1A 90 V, 100 V 0.78 V 1 mA at 125 °C 175 °C 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The VS-MBRS190-M3, VS-MBRS1100-M3 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards.

Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 1.0 Apk, TJ = 125 °C Range VALUES 1.0 90, 100 870 0.63 -55 to +175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-MBRS190-M3 90 VS-MBRS1100-M3 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle  non-repetitive surge current IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TL = 147 °C, rectangular waveform 5 μs sine or 3 μs rect.

pulse 10 ms sine or 6 ms rect.

Key Features

  • Small foot print, surface mountable.
  • Low forward voltage drop.
  • High frequency operation.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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