Datasheet Details
| Part number | VS-MBRS1100-M3 |
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| Manufacturer | Vishay |
| File Size | 124.02 KB |
| Description | High Performance Schottky Rectifier |
| Datasheet | VS-MBRS1100-M3 VS-MBRS190-M3 Datasheet (PDF) |
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Overview: .vishay. VS-MBRS190-M3, VS-MBRS1100-M3 Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A SMB (DO-214AA) Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 1A 90 V, 100 V 0.78 V 1 mA at 125 °C 175 °C 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | VS-MBRS1100-M3 |
|---|---|
| Manufacturer | Vishay |
| File Size | 124.02 KB |
| Description | High Performance Schottky Rectifier |
| Datasheet | VS-MBRS1100-M3 VS-MBRS190-M3 Datasheet (PDF) |
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The VS-MBRS190-M3, VS-MBRS1100-M3 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards.
Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 1.0 Apk, TJ = 125 °C Range VALUES 1.0 90, 100 870 0.63 -55 to +175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-MBRS190-M3 90 VS-MBRS1100-M3 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TL = 147 °C, rectangular waveform 5 μs sine or 3 μs rect.
pulse 10 ms sine or 6 ms rect.
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