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Vishay Intertechnology Electronic Components Datasheet

VS-VSKD196-16PBF Datasheet

Standard Recovery Diode

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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
INT-A-PAK
PRIMARY CHARACTERISTICS
IF(AV)
165 A to 230 A
Type
Modules - diode, high voltage
Package
INT-A-PAK
Circuit
configuration
Single diode, two diodes common anode,
two diodes common cathode, two diodes
doubler circuit
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• DC motor control and drives
• Battery chargers
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.166..
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
165
100
260
4000
4200
50 Hz
80
I2t
60 Hz
73
I2t
798
VRRM
TJ
Range
VSK.196..
195
100
305
4750
4980
113
103
1130
400 to 1600
-40 to +150
VSK.236..
230
100
360
5500
5765
151
138
1516
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-VSK.166
08
VS-VSK.196
12
VS-VSK.236
14
16
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1400
1600
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
UNITS
A
°C
A
kA2s
kA2s
V
°C
IRRM
AT 150 °C
mA
20
Revision: 04-May-17
1
Document Number: 94357
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-VSKD196-16PBF Datasheet

Standard Recovery Diode

No Preview Available !

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state
current at case temperature
Maximum RMS on-state current
IF(AV)
IF(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
IFSM
surge current
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
I2t
VF(TO)1
VF(TO)2
rt1
rt2
Maximum forward voltage drop
VFM
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
180° conduction, half sine wave
165
195
230
100
100
100
260
305
360
t = 10 ms
t = 8.3 ms
No voltage
reapplied
4000
4200
4750
4980
5500
5765
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3350
3500
80
73
4000
4200
113
103
4630
4850
151
138
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
56
80
107
52
73
98
t = 0.1 ms to 10 ms, no voltage reapplied
798
1130 1516
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
0.73
0.88
0.69
0.78
0.7
0.83
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 1.5
1.3
1.2
(I > x IF(AV)), TJ maximum
IFM = x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.26
1.43
1.2
1.38
1.07
1.46
UNITS
A
°C
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236 UNITS
IRRM
TJ = 150 °C
20
mA
50 Hz, circuit to base, all terminals shorted,
VINS
t=1s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
TJ, TStg
RthJC DC operation
RthCS Mounting surface smooth, flat and greased
-40 to +150
0.2
0.16
0.14
0.05
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of
the compound. Lubricated threads.
4 to 6
200
7.1
Case style
INT-A-PAK
UNITS
°C
K/W
Nm
g
oz.
Revision: 04-May-17
2
Document Number: 94357
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-VSKD196-16PBF
Description Standard Recovery Diode
Maker Vishay
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VS-VSKD196-16PBF Datasheet PDF






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