The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES • Trench MOS Schottky technology
TMBS®
• Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
2.0 A 200 V 40 A 0.65 V 150 °C
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 2.0 A TJ max.
VSB2200S Datasheet
