VSB20L45 Description
Vishay General Semiconductor Ultra Low VF = 0.26 V at IF = 5.
VSB20L45 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- High forward surge capability
- ESD capability
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- TJ 200 °C max. in solar by-pass mode application
- pliant to RoHS Directive 2011/65/EU
- Halogen-free according to IEC 61249-2-21 definition