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VSB20L45 - Photovoltaic Solar Cell Protection Schottky Rectifier

Features

  • Trench MOS Schottky technology Photovoltaic Solar Cell Protection Schottky Rectifier TMBS ®.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • High forward surge capability.
  • ESD capability P600.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • TJ 200 °C max. in solar by-pass mode.

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Datasheet Details

Part number VSB20L45
Manufacturer Vishay
File Size 151.14 KB
Description Photovoltaic Solar Cell Protection Schottky Rectifier
Datasheet download datasheet VSB20L45 Datasheet

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Full PDF Text Transcription

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VSB20L45 www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.26 V at IF = 5 A FEATURES • Trench MOS Schottky technology Photovoltaic Solar Cell Protection Schottky Rectifier TMBS ® • Low forward voltage drop, low power losses • High efficiency operation • High forward surge capability • ESD capability P600 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar by-pass mode application • Compliant to RoHS Directive 2011/65/EU • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 20 A TOP max. (AC mode) TJ max. (DC forward current) 20 A 45 V 250 A 0.40 V 150 °C 200 °C TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
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