VSB2200S Description
.DataSheet.co.kr New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier.
VSB2200S Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- pliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- halogen-free, RoHS pliant, and mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B10