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VSB2200S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology TMBS®.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41).
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 2.0 A 200 V 40 A 0.65 V 150 °C.

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Datasheet Details

Part number VSB2200S
Manufacturer Vishay
File Size 145.05 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSB2200S Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 2.0 A 200 V 40 A 0.65 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 2.0 A TJ max.
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