* a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES
* Package type: surface-mount
* Package form: high power SMD with lens
* Dimensions (L x W x H in mm): 3.4 x 3.4 x 1.8
VSMA1085600X02 Datasheet (199.49 KB)
VSMA1085600X02
199.49 KB
High power infrared emitting diode.
www.vishay.com VSMA1085600X02 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology LINKS TO ADDITIONAL RESO.
📁 Related Datasheet
VSMA1085250 High Power Infrared Emitting Diode (Vishay)
VSMA1094250X02 High Power Infrared Emitting Diode (Vishay)
VSM002NE4MS-G N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM003N06HS N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM003N06HS-G N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM005NE8HS-G 85V/124A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM007N07MS N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM007P06MS P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM008N07HS N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM012N06HS N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
