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VSMY3890X01 Datasheet

High Speed Infrared Emitting Diode

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www.vishay.com
VSMY3890X01
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm,
Surface Emitter Technology
948553
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY3890X01 is an
infrared, 890 nm emitting diode based on surface emitter
technology with high radiant intensity, high optical power
and high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface-mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• AEC-Q101 qualified
• Peak wavelength: p = 890 nm
• High reliability
• High radiant intensity
• Angle of half intensity: = ± 60°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, according to
J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
RELEASED FOR APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
• Automotive sensors
• Light curtain
PRODUCT SUMMARY
COMPONENT
VSMY3890X01
Ie (mW/sr)
18
Note
• Test conditions see table “Basic Characteristics”
(°)
± 60
P (nm)
890
tr (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSMY3890X01-GS08
VSMY3890X01-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.1, 31-Oct-2018
1 Document Number: 84945
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VSMY3890X01 Datasheet

High Speed Infrared Emitting Diode

No Preview Available !

www.vishay.com
VSMY3890X01
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Pulse peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
tp/T = 0.5, tp 100 μs
tp = 100 μs
According to Fig. 7, J-STD-020
J-STD-051, soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
200
1
190
100
-40 to +85
-40 to +110
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Axis Title
200 10000
180
160 RthJA = 250 K/W
140
120
1000
100
80
60 100
40
20
0 10
0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Axis Title
10000
100
80
RthJA = 250 K/W
60
1000
40 100
20
0 10
0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
MAX.
Forward voltage
IF = 100 mA, tp = 20 ms VF - 1.6 1.9
IF = 1 A, tp = 100 μs
VF - 2.8 -
Temperature coefficient of VF
IF = 1 mA
IF = 100 mA
TKVF
-
-2.0
-
TKVF
-
-2.0
-
Reverse current
IR Not designed for reverse operation
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
-
60
-
Radiant intensity
Radiant power
Temperature coefficient of e
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
Ie
e
TKe
12
-
-
-
-
18
160
55
-0.2
± 60
25
-
-
-
-
Peak wavelength
Spectral bandwidth
Temperature coefficient of p
IF = 100 mA
IF = 100 mA
IF = 100 mA
p 875 890 905
 - 35 -
TKp
-
0.3
-
Rise time
IF = 100 mA
tr - 15 -
Fall time
IF = 100 mA
tf - 15 -
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
°
nm
nm
nm/K
ns
ns
Rev. 1.1, 31-Oct-2018
2 Document Number: 84945
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VSMY3890X01
Description High Speed Infrared Emitting Diode
Maker Vishay
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