VT10200C-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Part: VT10200C-M3
- Manufacturer: Vishay (official site)
- Size: 120.46 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VT10200C-E3 | Trench MOS Barrier Schottky Rectifier |
| VT10200C | Trench MOS Barrier Schottky Rectifier |
| VT10202C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VT1045BP | Trench MOS Barrier Schottky Rectifier |
| VT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
VT10200C-M3 Description
VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB.